Course Title and Code
Solid State Devices (EE3010A)
Programme
UG
Course Credit
3-0-0-3 (Lecture-Tutorial-Practical-Total Credits)
Course Category
Core
Target Discipline
BTech Electrical
Prerequisite
Nil
Course Content
| Topics | Lectures |
|---|---|
| Introduction: Solids, crystals and electronic grade materials direct & indirect bandgap, elemental & compound semiconductors, 2D materials | 2 |
| Equilibrium carrier concentration: Thermal equilibrium, steady state, intrinsic semiconductor – band models (concept of hole, density of states, and Fermi level), extrinsic semiconductor – band models (density of states and Fermi level) | 4 |
| Excess carriers: Recombination and generation of carriers, injection level, lifetime, direct and indirect semiconductors | 4 |
| Carrier transport: Random motion, drift and diffusion | 4 |
| Procedure for analyzing semiconductor devices: Basic equations and approximations, equations of state – Continuity and Poisson equation | 4 |
| p-n Junction: energy band diagram, derivation of dc and ac characteristics, Optoelectronic devices: LEDs, Photovoltaics, Imagers | 9 |
| Bipolar junction transistors | 4 |
| Metal-semiconductor junctions | 3 |
| MOS Junction: C-V characteristics, threshold voltage, body effect | 4 |
| Metal Oxide Field Effect Transistor: physics, characteristics and modelling | 4 |
Course Objectives
This is a basic course on solid-state devices. The aim of this course is to introduce students to the electronic properties of semiconductors and semiconductor devices. They will also be introduced to the impact of solid-state device capabilities and limitations on electronic circuit performance. In the process, they will be introduced to the basic tools with which newly developed devices and other semiconductor applications can be studied.
Learning Outcomes
At the end of the course, the students should have:
- a fundamental understanding of the factors that influence the carrier concentration in semiconductors.
- an understanding of the behaviour of p-n junctions, MS contacts, BJT, MOS, and MOSFET devices.
- a fundamental understanding of the influence of different materials and device design on the performance of aforementioned devices.
- apply appropriate mathematical techniques and approximations to compute device parameters.
Text Books
- B. G. Streetman and S. Banerjee, “Solid State Electronic Devices,” Pearson Education India; Seventh edition (2015), ISBN-10: 9332555087, ISBN-13: 978-9332555082.
- R. F. Pierret, “Semiconductor Device Fundamentals,” Pearson 2nd edition, ISBN-10: 0201543931, ISBN-13: 978-0201543933.
- M. S. Tyagi, “Introduction to Semiconductor Materials and Devices,” Wiley (2008), ISBN-10: 8126518677, ISBN-13: 978-8126518678.
References
- S. M. Sze and K. K. Ng, “Physics of Semiconductor Devices,” Wiley-Interscience, 3rd Edition, ISBN 978-0-471-14323-9.
- Y. Taur and T. H. Ning, “Fundamentals of Modern VLSI Devices,” Cambridge University Press, ISBN-13: 9780511601538.
- A. DasGupta and N. DasGupta, “Semiconductor Devices: Modelling and Technology,” Prentice Hall India Learning Private Limited (2004), ISBN-10: 812032398X, ISBN-13: 978-8120323988.
- S. Karmalkar, “Solid state devices,” NPTEL video lectures: NPTEL Lectures.