Course Title and Code

Fundamentals of Semiconductor Devices (EE5510)

Course Credit

3-0-0-3 (Lecture-Tutorial-Practical-Total Credits)

Category

ERC

Prerequisites

None

Course Content

Sl. No. Topic Lecture (hours)
Module I Physics of Semiconductors
1 Introduction: Geometry of periodic crystals, review of classification of crystals, Miller indices 2
2 Equilibrium carrier concentration: Thermal equilibrium, intrinsic and extrinsic semiconductors, Schrodinger equation, Kronig-Penney model, Bloch’s theorem, k-space concepts, density of states, Fermi-Dirac statistics, doping concepts. 12
3 Recombination-generation of carriers and carrier transport: Recombination mechanisms, mobility, drift, diffusion. 5
Module II Analysis of Semiconductor Devices
1 Semiconductor equations: Transport, continuity and Poisson equations. 3
2 p-n and metal-semiconductor junctions: Band diagram, I-V characteristics, Zener tunneling, DC and small-signal characteristics. 8
3 Metal-oxide-semiconductor (MOS) junction: Electrostatics, flatband voltage, threshold voltage, influence of fixed and interface trap charges. 6
4 MOS field-effect transistors (MOSFETs): Physics, square-law theory, I-V characteristics, short-channel effects. 4
5 Optoelectronic devices: Analysis of LEDs, photodetectors, solar cells. 2

Total: 42 hours

Learning Objectives

This is an introductory graduate course on the fundamentals of semiconductor devices. In the first part of the course, students are introduced to concepts in solid-state physics and the semiconductor equations. In the second part, students will apply these concepts to study different devices.

Learning Outcomes

  • A fundamental understanding of factors influencing carrier concentration in semiconductors.
  • Understanding of the influence of materials and device design on device performance.
  • Ability to apply mathematical techniques to compute device parameters and use simulators.
  • Experience in electrical characterization using a semiconductor parameter analyser and DC probe station.

Teaching Methodology

Classroom lectures

Assessment Methods

Written examinations/quiz, continuous assessment

Textbooks

  • Semiconductor Device Fundamentals by R. F. Pierret, Pearson, 2nd edition, ISBN-10: 0201543931, ISBN-13: 978-0201543933.
  • Solid State Electronic Devices by B. G. Streetman and S. Banerjee, Pearson Education India, 7th edition, 2015, ISBN-10: 9332555087, ISBN-13: 978-9332555082.
  • Advanced Semiconductor Fundamentals by R. F. Pierret, Pearson, 2nd edition, ISBN-10: 013061792X, ISBN-13: 978-0130617927.
  • Physics of Semiconductor Devices by S. M. Sze and K. K. Ng, Wiley-Interscience, 3rd edition, ISBN 978-0-471-14323-9.

References

  • Operation and Modeling of the MOS Transistor by Y. Tsividis, The Oxford Series in Electrical and Computer Engineering, ISBN-13: 978-0195170153.
  • Fundamentals of Modern VLSI Devices by Y. Taur and T. H. Ning, Cambridge University Press, ISBN-13: 9780511601538.
  • Introduction to Solid State Physics by C. Kittel, Wiley, 8th edition, ISBN-10: 9788126535187.